| PART |
Description |
Maker |
| PRHMB200A6A1 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| 7MBP200VDA060-50 |
IGBT MODULE (V series) 600V / 200A / IPM
|
Fuji Electric
|
| MIMMF200S060B MIMMF200S060B2B |
600V 200A FRED Module RoHS Compliant
|
Micross Components
|
| 2MBI200VA-060-50 |
IGBT MODULE (V series) 600V / 200A / 2 in one package
|
Fuji Electric
|
| MIMMG200DR060UZA |
600V 200A IGBT Module RoHS Compliant
|
Micross Components
|
| PP200T060 |
POW-R-PAK 200A / 600V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| 2MBI200N-0 2MBI200N-060-03 |
600V / 200A 2 in one-package
Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| STI13005 STI13006 STI13002 STI13008 |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2A I(C) | TO-220
DIODE,SIDACTOR,275V,200A,2P,DO214AA,SMT,
晶体管|晶体管|叩| 600V的五（巴西）总裁| 1A条一c）|20
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 8A I(C) | TO-220 晶体管|晶体管|叩| 600V的五（巴西）总裁| 8A条一（c）|20
|
STMicroelectronics N.V.
|
| BUK475-100A BUK475-100B |
PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
PowerMOS transistor Isolated version of BUK455-100A/B
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| A290021T-120 A290021TL-55 A290021T-90 A290021TL-12 |
256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K × 8位CMOS 5.0伏只，引导扇区闪
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MB 32C 32#20 SKT RECP
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
MB 6C 6#20 PIN RECP
Reed Switch; Pull-In Amp Turns Max:20; Pull-In Amp Turns Min:10; Circuitry:SPST-NO; Switching Current Max:0.5A; Switching Voltage Max:200V; Mounting Type:Surface Mount; Contact Rating:10 VA; Supply Current:1.5A RoHS Compliant: Yes
RELAY, REED SPDT 12VDC
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Limit Switch,VERTICAL R/A,SPDT,ON-(ON),QUICK CONNECT Terminal,SIMULATED ROLLER
SWITCHES
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| 201CNQ020 201CNQ030 200CNQ030 |
V(rwm): 20V; 200A schottky center tap rectifier module
V(rwm): 30V; 200A schottky center tap rectifier module
|
International Rectifier
|
| ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
